The broadest line of both silicon and InGaAs detectors commercially available.
Indium Gallium Arsenide (InGaAs) PIN photodiodes are made using InGaAs/InP technology.
Cutting-edge silicon photodetectors that excel in precise detection of light ranging in wavelength from 250nm to 1100nm
Monolithic “quads” or quadrant photodiodes (QPDs) are 2 X 2 photodiode arrays with four planar diffused photodiode elements or segments.
Marktech offers a broad line of silicon photo Transistors in a variety of package types ranging from miniature metal can to ceramic packages.
Our High-Reliability Photoreflectors are sensors that contain both the LED emitter and photodetector functions within a single package.
Marktech Si APD’s offer low-level light and short pulse detections of wavelengths between 400 nm and 1100 nm.
UV detectors are offered in a variety of TO metal-can type packages from TO-18 to TO-39 with special UV glass lens to insure optimum lifetime and the least amount of material degradation
With the ability to detect light in the UV, visible, and infrared spectrums, photo detectors, photo transistors, and photodiodes are being used in increasingly more applications.
Marktech offers the broadest range of emitters commercially available ranging from 235nm to 4300nm across the UV, visible, NIR, SWIR, and MWIR spectral ranges.
Marktech offers the broadest range of UV LEDs commercially available ranging from 235nm to 400nm including UVA, UVB, UVC, and deep UVC LEDs.
Our advanced line of visible LED products is engineered to deliver high-quality, energy-efficient lighting solutions across various applications from 400nm to 700nm..
Our NIR LED wavelength range is typically from 700nm to 1000nm, extending into wavelengths invisible to the human eye but crucial for numerous technological and scientific applications.
Our standard product offering includes wavelengths from 1020nm to 3000nm and operating currents ranging from 20mA to 350mA for high-power applications.
Our Point Source LEDs are specifically engineered for optical encoders, edge sensors, and other critical applications that demand highly focused light with minimal dispersion.
Multi-LED chips in a single package, our multiple wavelength LEDs are engineered to address a myriad of applications across the UV, visible, NIR, SWIR, and MWIR spectral ranges
Designed to produce a highly defined red dot or reticle, facilitating accurate aiming without revealing the location to the target.
Ideally suited for applications including edge sensing, line sensing, coin bill validation, and bar code reading
Our panels are crafted to deliver uniform, vibrant illumination across a wide range of applications, from consumer electronics to industrial displays.
Crafted with the latest LED technology, these rings provide adjustable illumination to meet specific needs, ensuring optimal visibility and enhancing the quality of your projects.
As a proud CREE LED Solution Provider for over a decade, Marktech offers comprehensive engineering support, including design, binning, and material selection, alongside custom packaging options for specialized applications.
CREE LED through-hole emitters, designed for high-temperature and moisture environments with UV-resistant optical-grade epoxy, offer a range of colors for versatile applications in signage and lighting.
CREE High Brightness (HB) SMD LEDs are the brightest, most reliable architectural, video, signage, scoreboard, roadway, and specialty LEDs available today.
CREE LED’s P4 series represents a leap in LED design, combining efficiency with aesthetic versatility to meet the demands of modern lighting applications.
Marktech’s CREE LED XLamp® offerings on aluminum core starboards simplify LED integration for designers, providing a range of colors and angles on compact boards for easy testing and implementation in varied lighting applications.
Marktech Optoelectronics introduces its new product line of CREE LED die, including the EZ1350 Series Die, packaged in TO-cans (TO-18 and TO-39 outlines) designed for precision and reliability in demanding applications with protection against environmental factors like moisture and dust.
Marktech Optoelectronics combines over 40 years of expertise in optoelectronics with a focus on customized engineering solutions, addressing specific customer needs and applications.
Custom photodiode detectors are designed to meet unique customer requirements, offering specialized performance features and cost savings through optimizations such as integrated filters, photodiode arrays, and hybridization.
Through our vertically integrated manufacturing facilities in California and Japan, we offer custom LED solutions, including packaging and optoelectrical categorization, enhancing product design and market readiness.
Multiple LED dies combined in a single package are engineered to address various applications across the UV, visible, NIR, SWIR, and MWIR spectral ranges.
To succeed, you need the exact optoelectronic package custom-designed and manufactured for your application, including hermetic metal SMD, TO-can, plastic SMD, and molded through-hole packaging.
Made-to-order semiconductor chips (die) and wafers are designed and fabricated to fit your needs. Standard dies are available in specific wavelengths for high-volume production applications.
Bare and encapsulated LEDs, photodiodes, and other components are assembled on FR4, metal-cored, and flexible circuit boards, ready for production.
Learn about the latest trends, devices, and potential applications.
The latest news and announcements from Marktech Optoelectronics.
Detailed information about common uses for Marktech Optoelectronics devices.
In depth discussions on LEDs, Detectors and the science behind them.
Become familiar with common terminology and concepts for LED Devices.
List of common concepts and definitions for Photodiodes.
Marktech’s lineup of advanced InGaAs photodiode detectors consists of two detector families or series based on their spectral sensitivity ranges:
| Features | Product | Photo | VBR | Peak Wavelength | Spectral Range | Active Area | Dark Current | Rise Time | Buy Now | Specs |
|---|---|---|---|---|---|---|---|---|---|---|
| APD with TIA | MTAPD-05-003 |
|
160V - 200V | 800 | 400-1100 | (500um) .2 mm2 |
Digikey |
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| MTAPD-06-001 |
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120V - 160V | 800 | 400-1100 | (230um) .04 mm2 | 0.4nA | .3ns |
Digikey Mouser |
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| MTAPD-06-002 |
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160V - 200V | 800 | 400-1100 | (230um) .04 mm2 | 0.4nA | .3ns |
Digikey |
|
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| MTAPD-06-003 |
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120V - 160V | 800 | 400-1100 | (230um) .04 mm2 | 0.4nA | .3ns |
Digikey Mouser |
|
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| MTAPD-06-004 |
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160V - 200V | 800 | 400-1100 | (230um) .04 mm2 | 0.4nA | .3ns |
Digikey Mouser |
|
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| MTAPD-06-005 |
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120V - 160V | 800 | 400-1100 | (500um) .2 mm2 | 0.5nA | .3ns |
Digikey |
|
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| MTAPD-06-006 |
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160V - 200V | 800 | 400-1100 | (500um) .2 mm2 | 0.5nA | .3ns |
Digikey Mouser |
|
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| MTAPD-06-007 |
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120V - 160V | 800 | 400-1100 | (500um) .2 mm2 | 0.5nA | .3ns |
Digikey Mouser |
|
|
| MTAPD-06-008 |
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160V - 200V | 800 | 400-1100 | (500um) .2 mm2 | 0.5nA | .3ns |
Digikey |
|
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| MTAPD-06-009 |
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120V - 160V | 905 | 400-1100 | (230um) .04 mm2 | 1.0nA | .6ns |
Digikey Mouser |
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| MTAPD-06-010 |
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160V - 200V | 905 | 400-1100 | (230um) .04 mm2 | 1.0nA | .6ns |
Digikey Mouser |
|
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| MTAPD-06-011 |
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120V - 160V | 905 | 400-1100 | (230um) .04 mm2 | 1.0nA | .6ns |
Digikey |
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| MTAPD-06-012 |
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160V - 200V | 905 | 400-1100 | (230um) .04 mm2 | 1.0nA | .6ns |
Digikey |
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| MTAPD-06-013 |
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120V - 160V | 905 | 400-1100 | (500um) .2 mm2 | 1.0nA | .6ns |
Digikey Mouser |
|
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| MTAPD-06-014 |
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160V - 200V | 905 | 400-1100 | (500um) .2 mm2 | 1.0nA | .6ns |
Digikey Mouser |
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| MTAPD-06-015 |
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120V - 160V | 905 | 400-1100 | (500um) .2 mm2 | 1.0nA | .6ns |
Digikey |
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| MTAPD-06-016 |
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160V - 200V | 905 | 400-1100 | (500um) .2 mm2 | 1.0nA | .6ns |
Digikey Mouser |
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| Filtered | MTAPD-06-016-905F |
.jpg)
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160V - 200V | 905 | 800-1000 | (500um) .2 mm2 | 1.0nA | 0.6ns |
Digikey Mouser |
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| MTAPD-07-001 |
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120V - 160V | 800 | 400-1100 | (230um) .04 mm2 | 50pA | .3ns |
Digikey Mouser |
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| MTAPD-07-003 |
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120V - 160V | 800 | 400-1100 | (230um) .04 mm2 | 0.4nA | .3ns |
Digikey Mouser |
|
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| MTAPD-07-005 |
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120V - 160V | 800 | 400-1100 | (500um) .2 mm2 | 0.5nA | .3ns |
Digikey Mouser |
|
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| MTAPD-07-007 |
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120V - 160V | 800 | 400-1100 | (500um) .2 mm2 | 100pA | .3ns |
Digikey Mouser |
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| MTAPD-07-009 |
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120V - 160V | 905 | 400-1100 | (230um) .04 mm2 | 200pA | .6ns |
Digikey Mouser |
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| MTAPD-07-010 |
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160V - 200V | 905 | 400-1100 | (230um) .04 mm2 | 200pA | .6ns |
Digikey Mouser |
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| MTAPD-07-011 |
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120V - 160V | 905 | 400-1100 | (230um) .04 mm2 | 1.0nA | .6ns |
Digikey Mouser |
|
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| MTAPD-07-012 |
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160V - 200V | 905 | 400-1100 | (230um) .04 mm2 | 1.0nA | .6ns |
Digikey Mouser |
|
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| Filtered | MTAPD-07-012-905F |
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160V - 200V | 905 | 800-1000 | (500um) 0.04 mm2 | 1.0nA | 0.6ns |
Digikey Mouser |
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| MTAPD-07-013 |
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120V - 160V | 905 | 400-1100 | (500um) .2 mm2 | 1.0nA | .6ns |
Digikey Mouser |
|
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| MTAPD-07-014 |
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160V - 200V | 905 | 400-1100 | (500um) .2 mm2 | 1.0nA | .6ns |
Digikey Mouser |
|
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| Filtered | MTAPD-07-014-905F |
.jpg)
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160V - 200V | 905 | 800-1000 | (500um) .2 mm2 | 1.0nA | 0.6ns |
Digikey |
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| MTAPD-07-015 |
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120V - 160V | 905 | 400-1100 | (500um) .2 mm2 | 400pA | .6ns |
Digikey Mouser |
|
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| Filtered | MTAPD-07-015-905F |
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120V - 160V | 905 | 800-1000 | (500um) .2 mm2 | 1.0nA | 0.6ns |
Digikey |
|
| MTAPD-07-016 |
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160V - 200V | 905 | 400-1100 | (500um) .2 mm2 | 400pA | .6ns |
Digikey Mouser |
|
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| Filtered | MTAPD-07-016-905F |
|
160V - 200V | 905 | 800-1000 | (500um) .2 mm2 | 1.0nA | 0.6ns |
Digikey |
|
Photodiode chip active area sizes from 0.1 mm to 3.0 mm enable the optimal selection of low dark current, high speed, light sensitivity, and other detector characteristics for specific applications. InGaAs photodiode applications include fiber optics and free-space optical communications, medical diagnostics (glucose and blood gas), NIR-SWIR monitoring, IR laser alignment, infrared position sensing, spectroscopy, chromatography, and chemical analysis.
No integrated Thermal Electric (TE) Cooling is utilized or required on any of Marktech’s standard PIN photodiodes for reduced costs and improved overall efficiency. However, TE coolers, transimpedance amplifiers (TIAs), and other components can be custom packaged with our InGaAs detectors for special applications.
In addition to its InGaAs PIN photodiodes, Marktech offers foundry services for the epitaxial growth of SWIR wafers in the 1.0 um to 2.6 um range, using InP material as the base substrate. Marktech is currently producing these high-reliability wafers in 2″, 3″, and 4″ diameters. Among the applications for these wafers are photodetectors, linear arrays, and image sensors. Photodetectors processed using our epitaxial wafers provide significant advantages, including lower dark current, better shunt resistance, and improved performance at lower operating temperatures.
InGaAs PIN photodiodes are available in various package types such as hermetically sealed metal cans (TO-5, TO-18, TO-39, and TO-46), ceramic SAW packages, pigtail metal cans, 3mm molded plastic through-hole (flat lens or dome ceramic), and Marktech’s latest enhanced packaging system – the seam welded surface mount device (SMD) ATLAS package. InGaAs detectors in our hermetic ATLAS package have superior protection against oxygen and moisture ingress. The compact SMD form factor is highly suited to high-volume manufacturing. In addition, the low profile of ATLAS packaged InGaAs detectors is useful in wearable applications. We can also incorporate the photodetector die into custom-designed assemblies.
In addition to InGaAs infrared detectors, Marktech offers a range of standard silicon detectors such as photodiodes (SiPDs), phototransistors, and avalanche photodiodes. Our silicon detectors have a spectral sensitivity of 400 nm to 1100 nm for optical switching, Vis-NIR sensing, position sensing, laser alignment, light & laser monitoring, spectroscopy, oximetry, and other applications requiring high-speed, consistent, and high-reliability performance.
Spectral sensitivity in the 400nm to 1100nm range for applications such as spectroscopy equipment and any light sensing application requiring broadband sensitivity with enhancements in the blue/green region. UV enhanced silicon photodiode has some sensitivity down to 254nm.
Spectral sensitivity in the 400nm to 1100nm range for applications requiring very high sensitivity, uniform response, and increased reliability, such as card readers and optical sensors.
For high speed and low light level detection in the NIR spectrum, optimized for 800nm or 905nm peak response.
High-sensitivity and high reliability with spectral sensitivity in the 600nm – 2600nm range. Our InGaAs detectors are ideally suited for medical diagnostics, chemical analysis, position sensing, Vis-NIR-SWIR broadband sensing, and optical communications devices.
Spectral sensitivity from 254nm to 2600nm depending on specific InGaAs and silicon photodiodes placed in the same package.
Spectral sensitivity from 254nm to 2600nm depending on specific InGaAs and silicon photodiodes placed in the same package.
Do you need a small number of LEDs for your proof of concept? Or, are you looking to purchase a run for your prototypes? Visit our online stores at Digi-Key Electronics and Mouser Electronics today. In Japan, our products are now available through Rikei Corporation. In Israel, our products are now available through Militram. In Canada, our products are now available through ARL Group.
Let us help select the perfect parts and services to make your application come to life.
As our industry constantly changes and evolving, Marktech has been since the start. Stay on top of new and upcoming technology trends, industry news and new product offerings.
Marktech Optoelectronics is one of the world’s leading manufacturers of UV, visible, near-infrared (NIR), and short-wavelength infrared (SWIR) emitters and photodiode detectors. The company also engineers and manufactures materials such as silicon photodetector wafers, chips, and InP epiwafers.
Marktech Optoelectronics
3 Northway Lane North
Latham, NY 12110
Fax: +1-785-4725
Email: info@marktechopto.com